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产品型号TCM680EPA的Datasheet PDF文件预览

EVALUATION

KIT

AVAILABLE

TCM680

+5V TO ±10V VOLTAGE CONVERTER

FEATURES

GENERAL DESCRIPTION

■ 99% Voltage Conversion Efficiency

■ 85% Power Conversion Efficiency

■ Wide Voltage Range .........................+2.0V to +5.5V

■ Only 4 External Capacitors Required

■ Space Saving 8-Pin SOIC Design

The TCM680 is a dual charge pump voltage converter

that develops output voltages of +2V_INand – 2V_INfrom a

single input voltage of +2.0V to +5.5V. Common applica-

tions include ±10V from a single +5V logic supply, and ±6V

from a +3V lithium battery.

The TCM680 is packaged in a space-saving 8-pin

SOIC package and requires only four inexpensive external

capacitors. The charge pumps are clocked by an on-board

8kHz oscillator. Low output source impedances (typically

150Ω) provides maximum output currents of 10mA for each

output. Typical power conversion efficiency is 85%.

High efficiency, small installed size and low cost make

the TCM680 suitable for a wide variety of applications that

need both positive and negative power supplies derived

from a single input voltage.

APPLICATIONS

■ ±10V From +5V Logic Supply

■ ±6V From a 3V Lithium Cell

■ Handheld Instruments

■ Portable Cellular Phones

■ LCD Display Bias Generator

■ Panel Meters

■ Operational Amplifier Power Supplies

PIN CONFIGURATIONS (DIP AND SOIC)

ORDERING INFORMATION

–

V_OUT

C₁

Part No.

Package

Temperature

C₁

C₂

TCM680COA 8-Pin SOIC

8-Pin Plastic DIP

TCM680EOA 8-Pin SOIC

0°C to +70°C

– 40°C to +85°C

TCM680CPA

TCM680EPA

TCM680CPA

–

V_IN

C₂

–

V_OUT

TCM680EPA

8-Pin Plastic DIP

Charge Pump Family

Evaluation Kit

GND

TC7660EV

–

C₁

V_OUT

C₁

C₂

TCM680COA

TCM680EOA

–

V_IN

C₂

–

GND

V_OUT

TYPICAL OPERATING CIRCUIT

2.0V<V_IN< +5.5V

+5V

V_IN

4.7µF

C₁

V_OUT

V_OUT= (2xV_IN

)

4.7µF

–

C₁

TCM680

C₂

–

V_OUT= (– 2 x V_IN

V_OUT

)

4.7µF

–

C₂

4.7µF

GND

TC660-2 9/4/96

TELCOM SEMICONDUCTOR, INC.

4-13

+5V TO ±10V VOLTAGE CONVERTER

TCM680

ABSOLUTE MAXIMUM RATINGS*

Power Dissipation (T_A≤ 70°C)

Plastic DIP ......................................................730mW

Small Outline ..................................................470mW

Storage Temperature ............................ – 65°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

V_IN..................................................................................................... +6.0V

V⁺_OUT.............................................................................................. +12.0V

V_O^–_UT............................................................................................. – 12.0V

V_O^–_UTShort-Circuit Duration ............................ Continuous

V⁺_OUTCurrent ............................................................75mA

V_INdV/dT.............................................................. 1V/µsec

*Stresses above those listed in "Absolute Maximum Ratings" may cause

permanent damage to the device. These are stress ratings only and

functional operation of the device at these or other conditions above those

indicated in the operation section of the specification is not implied.

Exposure to the Absolute Maximum Ratings conditions for extended

periods of time may affect device reliability.

ELECTRICAL CHARACTERISTICS: V_IN= +5V, T_A= +25°C, test circuit Figure 1, unless otherwise indicated.

Symbol Parameter

Test Conditions

Min

Typ

Max

Unit

Supply Voltage Range

MIN. ≤ T_A≤ MAX., R_L= 2kΩ

2.0 1.5 to 5.5 5.5

Supply Current

V_IN= 3V, R_L= ∞

V_IN= 5V, R_L= ∞

—

0.5

—

2.5

V_IN= 5V, 0°C ≤ T_A≤ +70°C, R_L= ∞

V_IN= 5V, – 40°C ≤ T_A≤ +85°C, R_L= ∞

Negative Charge Pump Output

Source Resistance

I_L^–= 10mA, I_L⁺= 0mA, V_IN= 5V

I_L^–= 5mA, I_L⁺= 0mA, V_IN= 2.8V

I_L^–= 10mA, I_L⁺= 0mA, V_IN= 5V:

0°C ≤ T_A≤ +70°C

—

140

180

250

Ω

—

220

250

– 40°C ≤ T_A≤ +85°C

Positive Charge Pump Output

Source Resistance

I_L⁺= 10mA, I_L^–= 0mA, V_IN= 5V

I_L⁺= 5mA, I_L^–= 0mA, V_IN= 2.8V

I_L⁺= 10mA, I_L^–= 0mA, V_IN= 5V:

0°C ≤ T_A≤ +70°C

—

140

180

250

—

220

250

– 40°C ≤ T_A≤ +85°C

F_OSC

P_EFF

Oscillator Frequency

Power Efficiency

—

kHz

R_L= 2kΩ

V_OUTE_FFVoltage Conversion Efficiency

V⁺_OUT, R_L= ∞

—

V_O^–_UT, R_L= ∞

TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums

and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of

any circuits described herein and makes no representations that they are free from patent infringement.

PIN DESCRIPTION

V_IN

8-Pin

DIP/SOIC Symbol Description

4.7µF

C₁

OUT

C₁^–

Input. Capacitor C1 negative terminal.

Input. Capacitor C2 positive terminal.

Input. Capacitor C2 negative terminal.

Output. Negative output voltage (–2V_IN).

Input. Device ground.

–

OUT

C₁

C₂⁺

C₁

C₂

C₄

10µF

C₂^–

C₂

R_L

TCM680

–

V_O^–_UT

GND

V_IN

C₂

–

GND

OUT

Input. Power supply voltage.

C₁⁺

V⁺_OUT

Input. Capacitor C1 positive terminal.

Output. Positive output voltage (+2V_IN)

C₃

10µF

–

R_L

–

OUT

Figure 1. Test Circuit

4-14

TELCOM SEMICONDUCTOR, INC.

+5V TO ±10V VOLTAGE CONVERTER

TCM680

DETAILED DESCRIPTION

Phase 1

V_IN= +5V

–

V_DD

V_SS

SW1

SW3

V_SScharge storage – The positive side of capacitors C₁

and C₂are connected to +5V at the start of this phase. C₁⁺is

then switched to ground and the charge in C₁^–is transferred

to C₂^–. Since C₂⁺is connected to +5V, the voltage potential

across capacitor C₂is now 10V.

–

SW2

SW4

–5V

V_IN= +5V

–

Figure 4. Charge Pump – Phase 3

Phase 4

V_DD

SW1

SW3

V_DDtransfer – The fourth phase of the clock connects

the negative terminal of C₂to ground, and transfers the

generated 10V across C₂to C₄, the V_DDstorage capacitor.

Again, simultaneously with this, the positive side of capaci-

tor C₁is switched to +5V and the negative side is connected

to ground, and the cycle begins again.

V_SS

–

SW2

SW4

–5V

Figure 2. Charge Pump – Phase 1

+5V

–

Phase 2

V_DD

V_SS

SW1

SW3

V_SStransfer – Phase two of the clock connects the

negative terminal of C₂to the V_SSstorage capacitor C₃and

the positive terminal of C₂to ground, transferring the gener-

ated–10VtoC₃. Simultaneously, thepositivesideofcapaci-

tor C₁is switched to +5V and the negative side is connected

to ground.

–

SW2 SW4

–10V

+5V

–

Figure 5. Charge Pump – Phase 4

V_DD

MAXIMUM OPERATING LIMITS

SW1

SW3

V_SS

–

The TCM680 has on-chip zener diodes that clamp V_IN

to 5.8V, V⁺_OUTto 11.6V, and V_O^–_UTto –11.6V. Never exceed

the maximum supply voltage or excessive current will be

shuntedbythesediodes, potentiallydamagingthechip. The

TCM680 will operate over the entire operating temperature

range with an input voltage of 2V to 5.5V.

–

SW2

SW4

–10V

Figure 3. Charge Pump – Phase 2

Phase 3

V_DDcharge storage – The third phase of the clock is

identical to the first phase – the charge transferred in C₁

produces–5VinthenegativeterminalofC₁,whichisapplied

to the negative side of capacitor C₂. Since C₂⁺is at +5V, the

voltage potential across C₂is 10V.

TELCOM SEMICONDUCTOR, INC.

4-15

+5V TO ±10V VOLTAGE CONVERTER

TCM680

Capacitor Selection

EFFICIENCY CONSIDERATIONS

The TCM680 requires only 4 external capacitors for

operation. These can be inexpensive polarized aluminum

electrolytic types. For the circuit in Figure 6 the output

characteristics are largely determined by the external

capacitors.AnexpressionforR_OUTcanbederivedasshown

below:

Theoretically a charge pump can approach 100% effi-

ciency under the following conditions:

• The charge Pump switches have virtually no offset

and extremely low on resistance

• Minimal power is consumed by the drive circuitry

• The impedances of the reservoir and pump capaci-

tors are negligible

R⁺_OUT= 4(R_SW1+ R_SW2+ ESR_C1+ R_SW3+ R_SW4+ ESR_C2

)

For the TCM680, efficiency is as shown below:

+4(R_SW1+ R_SW2+ ESR_C1+ R_SW3+ R_SW4+ ESR_C2

+1/(f_PUMPx C1) + 1/(f_PUMPx C2) + ESR_C4

)

Efficiency V⁺= V_DD/(2V_IN)

V_DD= 2V_IN– V⁺_DROP

R^–_OUT

4(R_SW1+ R_SW2+ ESR_C1+ R_SW3+ R_SW4+ ESR_C2

+4(R_SW1+ R_SW2+ ESR_C1+ R_SW3+ R_SW4+ ESR_C2

+1/(f_PUMPx C1) + 1/(f_PUMPx C2) + ESR_C3

)

V⁺_DROP= (I⁺_OUT)(R⁺_OUT

)

Efficiency V^–= V_SS/(– 2V_IN)

V_SS= 2V_IN– V^–_DROP

V^–_DROP= (I^–_OUT)(R^–_OUT

Assuming all switch resistances are approximately

equal...

)

Power Loss = (V⁺_DROP)(I⁺_OUT) + (V^–_DROP)(I^–_OUT

)

R⁺_OUT= 32R_SW+ 8ESR_C1+ 8ESR_C2+ ESR_C4

+1/(f_PUMPx C1) + 1/(f_PUMPx C2)

There will be a substantial voltage difference between

(V⁺_OUT– V_IN) and V_INfor the positive pump and between

V⁺_OUTandV_{O– UT}iftheimpedancesofthepumpcapacitorsC₁

and C₂are high with respect to the output loads.

R^–_OUT= 32R_SW+ 8ESR_C1+ 8ESR_C2+ ESR_C3

+1/(f_PUMPx C1) + 1/(f_PUMPx C2)

Larger values of reservoir capacitors C₃and C₄will

reduce output ripple. Larger values of both pump and

reservoir capacitors improve the efficiency. See "Capacitor

Selection" in Applications Section.

R_OUTis typically 140Ω at +25°C with V_IN= +5V and C1

and C2 as 4.7µF low ESR capacitors. The fixed term

(32R_SW) is about 130Ω. It can be seen easily that increasing

or decreasing values of C1 and C2 will affect efficiency by

changing R_OUT. However, be careful about ESR. This term

can quickly become dominant with large electrolytic capaci-

tors. Table 1 shows R_OUTfor various values of C1 and C2

(assume 0.5Ω ESR). C1 and C4 must be rated at 6VDC or

greater while C2 and C3 must be rated at 12VDC or greater.

OutputvoltagerippleisaffectedbyC3andC4. Typically

the larger the value of C3 and C4 the less the ripple for a

given load current. The formula for V_RIPPLE(p-p)is given

below:

APPLICATIONS

Positive and negative Converter

The most common application of the TCM680 is as a

dualchargepumpvoltageconverterwhichprovidespositive

and negative outputs of two times a positive input voltage.

The simple circuit of Figure 6 performs this same function

using the TCM680 and external capacitors, C₁, C₂, C₃and C_4.

V_+RIPPLE(p-p)= {1/[2(f_PUMP/3) x C4] + 2(ESR_C4)}(I⁺_OUT

V_{–RIPPLE(p-p)}= {1/[2(f_PUMP/3) x C3] + 2(ESR_C3)}(I^–_OUT

)

C₁

22µF

)

–

V_OUT

C₁

For a 10µF (0.5Ω ESR) capacitor for C3, C4,

f_PUMP= 21kHz and I_OUT= 10mA the peak-to-peak ripple

voltage at the output will be less than 100mV. In most

applications(I_OUT<=10mA)10-20µFoutputcapacitorsand

1-5µF pump capacitors will suffice. Table 2 shows V_RIPPLE

for different values of C3 and C4 (assume 1Ω ESR).

C₄

C₂

C₁

22µF

C₂

TCM680

–

V_IN

C₂

–

V_OUT

GND

C₃

22µF

–

V_OUT

Figure 6. Positive and Negative Converter

4-16

TELCOM SEMICONDUCTOR, INC.

+5V TO ±10V VOLTAGE CONVERTER

TCM680

Table 1. R_OUTvs. C1 ,C2

Paralleling Devices

C1, C2 (µF)

R_OUT(Ω)

Paralleling multiple TCM680s reduces the output resis-

tance of both the positive and negative converters. The

effective output resistance is the output resistance of a

single device divided by the number of devices. As illus-

trated in Figure 7, each requires separate pump capacitors

C₁and C₂, but all can share a single set of reservoir

capacitors.

0.1

0.47

1089

339

232

165

157

146

141

137

3.3

4.7

±5V Regulated Supplies From A Single

3V Battery

100

Figure 8 shows a complete ±5V power supply using one

3V battery. The TCM680 provides +6V at V⁺_OUT, which is

regulatedto+5VbytheTC55,and–5VbythenegativeLDO.

The input to the TCM680 can vary from 3V to 6V without

affecting regulation appreciably. With higher input voltage,

more current can be drawn from the outputs of the TCM680.

With 5V at V_IN, 10mA can be drawn from both regulated

outputs simultaneously. Assuming 150Ω source resistance

forbothconverters, with(I⁺_L+I_L)=20mA, thepositivecharge

pump will droop 3V, providing +7V for the negative charge

pump.

Table 2. V_{RIPPLE (p-p)}vs. C3, C4 (I_OUT= 10mA)

C3, C4 (µF)

V_RIPPLE(mV)

0.47

1540

734

236

172

3.3

4.7

100

V_IN

C₁

–

10µF

–

C₁

TCM680

GND

C₂

–

C₂

V_OUT

–

NEGATIVE

SUPPLY

10µF

V_OUT

–

C₂

GND

–

C_OUT

22µF

GND

Figure 7. Paralleling TCM680 for Lower Output Source Resistance

TELCOM SEMICONDUCTOR, INC.

4-17

+5V TO ±10V VOLTAGE CONVERTER

TCM680

–

C_OUT

22µF

TC55RP5002Exx

V_OUT

V_IN

C₁

V_IN

+5 SUPPLY

V_OUT

–

+6V

–

10µF

V_SS

1µF

–

C₁

–

GROUND

TCM680

C₂

–

V_SS

10µF

–6V

–

V_OUT

V_IN

–5 SUPPLY

GND

–

22µF

NEGATIVE LDO

–

C_OUT

TC54VC2702Exx

V_OUT

V_IN

LOW BATTERY

V_SS

Figure 8. Split Supply Derived from 3V Battery

4-18

TELCOM SEMICONDUCTOR, INC.

+5V TO ±10V VOLTAGE CONVERTER

TCM680

TYPICAL CHARACTERISTICS

V⁺_OUTor V^–_OUT

Output Resistance vs. V_IN

–

V_OUTor V_OUTvs. Load Current

10.0

9.0

300

C₁– C₄= 10µF

= 5V

250

200

8.0

7.0

150

OUT

100

(V)

LOAD CURRENT (mA)

–

Supply Current vs. V_IN

Output Voltage vs. Output Current From V

10.0

to V

OUT

1.4

1.2

1.0

= 5V

9.0

0.8

0.6

0.4

0.2

NO LOAD

8.0

7.0

OUT

–

OUT

(V)

OUTPUT CURRENT (mA) From V

TO V

Output Source Resistance vs. Temperature

180

160

= 5V

OUT = 10mA

OUT

140

120

100

-50

100

TEMPERATURE (°C)

TELCOM SEMICONDUCTOR, INC.

4-19

型号:	TCM680EPA
是否Rohs认证：	不符合
生命周期：	Transferred
包装说明：	PLASTIC, DIP-8
Reach Compliance Code：	unknown
风险等级：	5.74
模拟集成电路 - 其他类型：	SWITCHED CAPACITOR CONVERTER
最大输入电压：	5.5 V
最小输入电压：	2 V
JESD-30 代码：	R-PDIP-T8
JESD-609代码：	e0
功能数量：	1
端子数量：	8
最高工作温度：	85 °C
最低工作温度：	-40 °C
最大输出电流：	0.01 A
标称输出电压：	11 V
封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP
封装等效代码：	DIP8,.3
封装形状：	RECTANGULAR
封装形式：	IN-LINE
认证状态：	Not Qualified
子类别：	Other Analog ICs
表面贴装：	NO
切换器配置：	DOUBLER INVERTER
最大切换频率：	8 kHz
温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子节距：	2.54 mm
端子位置：	DUAL
Base Number Matches：	1

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