TLP250芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号TLP250的概述

TLP250概述 TLP250是一款功能强大的光隔离驱动器，广泛应用于电力电子和工业控制领域。由东芝（Toshiba）公司开发，TLP250具备较高的共模抑制比和快速的开关速度，特别适合于驱动MOSFET和IGBT等功率器件。在高压环境下，其光隔离特性能够有效保护控制电路，增强电系统的安全性。因此，在自动化控制、电机驱动等多种场合中，TLP250逐渐成为了一种受欢迎的选择。 TLP250详细参数 TLP250的主要参数包括： - 最大输入电压（VDD）：通常为20V; - 最大输出电流（IO）：高达2A，适用于各种驱动需求; - 开关频率：最高可达50kHz，满足大部分工业应用的需求; - 共模抑制比（CMR）：典型值为50kV/μs，确保信号完整性; - 工作温度范围：-40°C至+100°C，适应不同环境条件; - 封装类型：通常为DIP-8或SOP-8，方便安装和散热; - 引脚...

产品型号TLP250的Datasheet PDF文件预览

TLP250

TOSHIBA Photocoupler GaAlAs Ired & Photo−IC

TLP250

Transistor Inverter

Inverter For Air Conditionor

IGBT Gate Drive

Unit in mm

Power MOS FET Gate Drive

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a

integrated photodetector.

This unit is 8 lead DIP package.

−

TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

•

Input threshold current: I =5mA(max.)

Supply current (I ): 11mA(max.)

Supply voltage (V ): 10

−35V

Output current (I ): ±1.5A (max.)

Switching time (t

): 1.5µs(max.)

(min.)

pLH pHL

Isolation voltage: 2500V

rms

UL recognized: UL1577, file No.E67349

Option (D4) type

VDE approved: DIN VDE0884/06.92,certificate No.76823

Maximum operating insulation voltage: 630V

Highest permissible over voltage: 4000V

TOSHIBA

Weight: 0.54 g

11−10C4

(Note) When a VDE0884 approved type is needed,

please designate the "option (D4)"

Creepage distance: 6.4mm(min.)

•

Clearance: 6.4mm(min.)

Schmatic

Pin Configuration (top view)

(T 1)

(T 2)

GND

1 : N.C.

A 0.1µF bypass capcitor must be

connected between pin 8 and 5 (See Note 5).

2 : Anode

3 : Cathode

4 : N.C.

5 : GND

6 : V (Output)

7 : V

8 : V

Truth Table

Tr1

Tr2

Off

Input

LED

2004-06-25

TLP250

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Forward current

Symbol

Rating

Unit

Forward current derating (Ta ≥ 70°C)

Peak transient forward curent

Reverse voltage

∆I / ∆Ta

−0.36

mA / °C

(Note 1)

FPT

Junction temperature

125

°C

“H”peak output current (P ≤ 2.5µs,f ≤ 15kHz)

(Note 2)

−1.5

+1.5

OPH

“L”peak output current (P ≤ 2.5µs,f ≤ 15kHz)

OPL

(Ta ≤ 70°C)

Output voltage

Supply voltage

(Ta = 85°C)

(Ta ≤ 70°C)

(Ta = 85°C)

Output voltage derating (Ta ≥ 70°C)

Supply voltage derating (Ta ≥ 70°C)

Junction temperature

∆V / ∆Ta

−0.73

125

V / °C

°C

∆V

/ ∆Ta

Operating frequency

(Note 3)

kHz

°C

Operating temperature range

−20~85

−55~125

260

opr

Storage temperature range

°C

stg

sol

Lead soldering temperature (10 s)

Isolation voltage (AC, 1 min., R.H.≤ 60%)

(Note 4)

(Note 5)

°C

2500

Vrms

Note 1: Pulse width P ≤ 1µs, 300pps

Note 2: Exporenential wavefom

Note 3: Exporenential wavefom, I

≤ −1.0A( ≤ 2.5µs), I

≤ +1.0A( ≤ 2.5µs)

OPL

OPH

Note 4: It is 2 mm or more from a lead root.

Note 5: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted

together.

Note 6: A ceramic capacitor(0.1µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high

gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead

length between capacitor and coupler should not exceed 1cm.

Recommended Operating Conditions

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Input current, on

(Note 7)

F(ON)

Input voltage, off

Supply voltage

0.8

―

F(OFF)

―

Peak output current

±0.5

OPH OPL

Operating temperature

−20

°C

opr

Note 7: Input signal rise time (fall time) < 0.5 µs.

2004-06-25

TLP250

Electrical Characteristics (Ta = −20~70°C, unless otherwise specified)

Test

Cir−

Characteristic

Symbol

Test Condition

= 10 mA , Ta = 25°C

= 10 mA

Min.

Typ.*

1.6

Max.

Unit

cuit

―

Input forward voltage

1.8

Temperature coefficient of

forward voltage

∆V / ∆Ta

―

−2.0

―

mV / °C

Input reverse current

Input capacitance

―

= 5V, Ta = 25°C

―

µA

V = 0 , f = 1MHz , Ta = 25°C

―

250

= 10 mA

“H” level

−0.5

−1.5

―

OPH

= 4V

8−6

= 30V

Output current

Output voltage

(*1)

= 0

“L” level

“H” level

“L” level

0.5

―

OPL

= 2.5V

= −15V

6−5

= +15V, V

CC1

EE1

12.8

−14.2

―

R = 200Ω, I = 5mA

= +15V, V

= −15V

EE1

CC1

−12.5

R = 200Ω, V = 0.8V

= 30V, I = 10mA

―

Ta = 25°C

“H” level

“L” level

―

CCH

= 30V, I = 10mA

―

Supply current

= 30V, I = 0mA

7.5

―

Ta = 25°C

―

CCL

= 30V, I = 0mA

―

Threshold input

current

Threshold input

voltage

= +15V, V

= −15V

EE1

“Output

CC1

FLH

FHL

1.2

L→H”

R = 200Ω, V > 0V

= +15V, V

= −15V

EE1

“Output

CC1

―

0.8

―

H→L”

R = 200Ω, V < 0V

Supply voltage

Capacitance

(input−output)

= 0 , f = 1MHz

1.0

2.0

Ta = 25℃

= 500V , Ta = 25°C

Resistance(input−output)

―

1×10

―

Ω

R.H.≤ 60%

* All typical values are at Ta = 25°C

(*1): Duration of I time ≤ 50µs

2004-06-25

TLP250

Switching Characteristics (Ta = −20~70°C , unless otherwise specified)

Test

Cir−

Characteristic

Symbol

Test Condition

Min.

Typ.*

Max.

Unit

µs

cuit

L→H

H→L

―

0.15

―

0.5

―

pLH

pHL

Propagation

delay time

I = 8mA (Note 7)

= +15V, V

= −15V

EE1

CC1

Output rise time

Output fall time

R = 200Ω

―

Common mode transient

immunity at high level

output

= 600V, I = 8mA

−5000

―

V / µs

= 30V, Ta = 25°C

Common mode transient

immunity at low level

output

= 600V, I = 0mA

5000

= 30V, Ta = 25°C

* All typical values are at Ta = 25°C

Note 7: Input signal rise time (fall time) < 0.5 µs.

2004-06-25

TLP250

Test Circuit 1 :

Test Circuit 2 : IOPL

0.1µF

OPL

6-5

Test Circuit 3 : IOPH

Test Circuit 4 : VOH

CC1

0.1µF

8-6

OPH

EE1

Test Circuit 5 : V

CC1

0.1µF

EE1

2004-06-25

TLP250

Test Circuit 6: t

, t

, t t

pLH pHL r f

0.1µF

CC1

80%

GND

t HL

t LH

100Ω

EE1

Test Circuit 7: C , C

MH ML

0.1µF

600V

90%

10%

480 (V)

t_{r (µs)}

C_{ML =}

SW :A(I =8mA)

480 (V)

C_{MH =}

t_{f (µs)}

26V

SW :B(I =0)

(C ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output

ML MH

voltage in the low (high) state.

2004-06-25

TLP250

– V

ΔV / ΔTa – I

F F

100

-2.6

-2.4

-2.2

-2.0

-1.8

Ta = 25 °C

0.5

0.3

0.1

0.05

0.03

-1.6

-1.4

0.01

1.4

Forward voltage

1.8

2.0

100

1.0

1.2

1.6

0.1

0.3

0.5

(V)

Forward current

(mA)

– Ta

100

Ambient temperature Ta (°C)

– Ta

OPH, OPL

PW ≦2.5 µs, f ≦15 KHz

Ambient Temperature Ta (°C)

2004-06-25

TLP250

RESTRICTIONS ON PRODUCT USE

•

The information contained herein is subject to change without notice.

•

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed

by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is

granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in

general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility

of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire

system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life,

bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the

“Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products

are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a

malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include

atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments,

combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products

listed in this document shall be made at the customer’s own risk.

•

The products described in this document are subject to the foreign exchange and foreign trade laws.

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under

any law and regulations.

•

GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or

dissolve chemically.

2004-06-25

TLP250相关文章

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TLP250产品参数

型号:	TLP250
是否无铅：	含铅
是否Rohs认证：	不符合
生命周期：	End Of Life
IHS 制造商：	TOSHIBA CORP
包装说明：	DIP-8
Reach Compliance Code：	unknown
HTS代码：	8541.40.80.00
风险等级：	6.59
Samacsys Description：	MOSFET/IGBT optocouplerTLP250 DIP8n DIP8
其他特性：	UL RECOGNIZED
配置：	SINGLE
最大正向电流：	0.02 A
最大绝缘电压：	2500 V
安装特点：	THROUGH HOLE MOUNT
元件数量：	1
功能数量：	1
最高工作温度：	85 °C
最低工作温度：	-20 °C
光电设备类型：	LOGIC IC OUTPUT OPTOCOUPLER
最长响应时间：	5e-7 s
标称响应时间：	1.5e-7 ns
最小供电电压：	15 V
表面贴装：	NO
Base Number Matches：	1

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