XP4211芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

产品型号XP4211的Datasheet PDF文件预览

Composite Transistors

XP04211 (XP4211)

Silicon NPN epitaxial planar type

Unit: mm

+0.05

0.12

–0.02

For switching/digital circuits

0.2 ^0.05

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

10˚

•

UNR2211 (UN2211) × 2

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

EIAJ : SC-88

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

SMini6-G1 Package

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Collector current

I_C

P_T

T_j

100

°C

Marking Symbol: 9V

Total power dissipation

Junction temperature

Storage temperature

150

Internal Connection

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high-level

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

V_CE= 10 V, I_C= 5 mA

0.1

0.5

µA



I_CEO

I_EBO

h_FE

V_CE(sat)I_C= 10 mA, I_B= 0.3 mA

0.25

V_OH

V_OL

R₁

V_CC= 5 V, V_B= 0.5 V, R_L= 1 kΩ

4.9

Output voltage low-level

V_CC= 5 V, V_B= 2.5 V, R_L= 1 kΩ

0.2

+30%

1.2

Input resistance

−30%

1.0

150

kΩ



Resistance ratio

R₁/ R₂

f_T

0.8

Transition frequency

V_CB= 10 V, I_E= −2 mA, f = 200 MHz

MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2004

SJJ00168BED

XP04211

P_T T_a

I_C V_CE

V_CE(sat) I_C

160

120

250

200

150

100

I_C/ I_B= 10

T_a= 25°C

I_B= 1.0 mA

0.9 mA

0.8 mA

0.7 mA

0.6 mA

0.5 mA

0.4 mA

0.3 mA

25°C

0.2 mA

0.1 mA

T_a= 75°C

0.1

0.01

−25˚C

0.1

100

120

160

Collector-emitter voltage V_CE(V)

(

)

Collector current I_C(mA)

Ambient temperature T_a°C

h_FE I_C

C_ob V_CB

I_O V_IN

10⁴

10³

10²

400

300

200

100

V_O= 5 V

T_a= 25°C

f = 1 MHz

I_E= 0

V_CE= 10 V

T_a= 75°C

T_a= 25°C

25°C

−25°C

0.4

100

1000

0.1

100

0.6

0.8

1.0

1.2

1.4

Collector current I_C(mA)

Input voltage V_IN(V)

Collector-base voltage V_CB(V)

V_IN I_O

100

V_O= 0.2 V

T_a= 25°C

0.1

0.01

0.1

100

Output current I_O(mA)

SJJ00168BED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of

the products or technical information described in this material and controlled under the "Foreign Exchange

and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteristics and

applied circuits examples of the products. It neither warrants non-infringement of intellectual property right

or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical

information as described in this material.

(4) The products described in this material are intended to be used for standard applications or general elec-

tronic equipment (such as office equipment, communications equipment, measuring instruments and house-

hold appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-

tion equipment, life support systems and safety devices) in which exceptional quality and reliability are

required, or if the failure or malfunction of the products may directly jeopardize life or harm the human

body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without notice for

modification and/or improvement. At the final stage of your design, purchasing, or use of the products,

therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-

tions satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-

ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not

be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of

break down and failure mode, possible to occur to semiconductor products. Measures on the systems such

as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent

physical injury, fire, social damages, for example, by using the products.

(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life

and amount of time let standing of unsealed items) agreed upon when specification sheets are individually

exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP

型号:	XP4211
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	PANASONIC CORP
零件包装代码：	SC-88
包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.21.00.75
风险等级：	5.82
其他特性：	BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	35
JESD-30 代码：	R-PDSO-G6
元件数量：	2
端子数量：	6
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.15 W
认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	10
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	150 MHz
Base Number Matches：	1

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