AP4525GEM
N-CH Electrical Characteristics@ T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.04
-
-
-
6
-
-
-
8
1.5
4
7
20
20
4
580
100
70
2
Max. Units
-
-
28
32
3
-
1
25
±30
13
-
-
-
-
-
-
930
-
-
3
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=40V, V
GS
=0V
V
DS
=32V, V
GS
=0V
V
GS
=±16V
I
D
=6A
V
DS
=20V
V
GS
=4.5V
V
DS
=20V
I
D
=6A
R
G
=3Ω,V
GS
=10V
R
D
=3.3Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.1A, V
GS
=0V
I
S
=6A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
20
12
Max. Units
1.8
-
-
V
ns
nC
2/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
