AP4525GEM
P-Channel
12
10000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
I
D
= -5 A
V
DS
= - 2 0 V
8
1000
C
iss
C (pF)
4
100
C
oss
C
rss
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
100us
1ms
0.2
-I
D
(A)
0.1
1
10ms
100ms
0.1
0.05
P
DM
t
0.02
0.1
T
c
=25 C
Single Pulse
o
1s
DC
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Single Pulse
0.01
R
thja
=135
o
C/W
0.01
0.1
1
10
100
0.01
0.001
0.01
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
= -5V
-I
D
, Drain Current (A)
T
j
=25 C
o
T
j
=150 C
o
V
G
Q
G
20
-4.5V
Q
GS
10
Q
GD
Charge
0
0
2
4
6
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
