AP4525GEM
N-Channel
30
30
T
A
= 25
o
C
I
D
, Drain Current (A)
20
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
V
G
=3.0V
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
20
10
10
0
0
1
2
3
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
I
D
=4A
100
T
A
=25 C
Normalized R
DS(ON)
o
I
D
=6A
V
G
=10V
1.6
R
DS(ON)
(m
Ω
)
80
60
1.2
40
20
2
4
6
8
10
0.8
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
8
Normalized V
GS(th)
(V)
1.2
I
S
(A)
6
T
j
=150
o
C
4
T
j
=25
o
C
0.8
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
