AP9972GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Single Drive Requirement
▼
Surface Mount Package
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
18mΩ
60A
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP)
are
available for low-profile applications.
G
D
G D
S
TO-263(S)
TO-220(P)
S
Rating
60
±25
60
38
230
89
0.7
450
30
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
3
Avalanche Current
3
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.4
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200803183