AP9972GS/P
f=1.0MHz
12
10000
I
D
= 35 A
V
GS
, Gate to Source Voltage (V)
10
8
V
DS
=48V
V
DS
=38V
V
DS
=30V
C (pF)
1000
C
iss
6
4
2
C
oss
C
rss
0
0
20
40
60
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
100us
1ms
10
0.1
0.1
0.05
P
DM
10ms
T
C
=25 C
Single Pulse
o
t
0.02
T
0.01
100ms
DC
10
100
1000
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
0.1
1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V
DS
=5V
80
V
G
o
o
I
D
, Drain Current (A)
T
j
=25 C
60
T
j
=150 C
Q
G
4.5V
Q
GS
Q
GD
40
20
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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