AP9972GS/P
200
150
100
50
150
100
50
10V
7.0V
10V
7.0V
5.0V
4.5V
5.0V
4.5V
T C = 150 o C
V G =3.0V
V G =3.0V
T C =25 o C
0
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
18
16
14
1.6
1.4
1.2
1.0
0.8
0.6
I D = 25 A
I D =35A
T
C =25 o C
V
G =10V
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
15
10
5
1.7
1.2
0.7
0.2
T j =150 o C
T j =25 o C
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
