5SNA 2400E170100
1000
20
V
CC
= 900 V
C
ies
100
15
V
CC
= 1300 V
C [nF]
C
oes
V
GE
[V]
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
10
10
C
res
5
I
C
= 2400 A
T
vj
= 25 °C
0
35
1
0
5
10
15
20
V
CE
[V]
25
30
0
2
4
6
8
10 12
Q
g
[µC]
14
16
18
20
Fig. 9
Typical capacitances
vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
2.5
V
CC
≤
1200 V, T
vj
= 125 °C
V
GE
= ±15 V, R
G
= 0.56 ohm
2
1.5
I
Cpulse
/ I
C
1
0.5
Chip
Module
0
0
500
1000
V
CE
[V]
1500
2000
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 7 of 9
ABB [ THE ABB GROUP ]
