5SNA 2400E170100
1000
900
800
700
600
E
rec
[mJ]
500
E
rec
400
300
200
100
E
rec
[mJ] = -4.53 x 10
-5
x I
F 2
+ 0.382 x I
F
+ 76
2500
V
CC
= 900 V
R
G
= 0.56 ohm
T
vj
= 125 °C
L
σ
= 60 nH
I
rr
1200
V
CC
= 900 V
I
F
= 2400 A
T
vj
= 125 °C
L
σ
= 60 nH
2400
2000
1000
2000
I
rr
1600
800
E
rec
[mJ], Q
rr
[µC]
1500
Q
rr
1000
I
rr
[A], Q
rr
[µC]
Q
rr
R
G
= 0.56 ohm
500
200
R
G
= 3.9 ohm
E
rec
R
G
= 2.2 ohm
400
R
G
= 1.5 ohm
R
G
= 1.0 ohm
R
G
= 0.82 ohm
600
1200
800
400
0
0
1000
2000
3000
4000
I
F
[A]
0
5000
0
2
3
4
5
6
7
8
9
10
11
di/dt [kA/µs]
0
Fig. 12
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
4800
4400
4000
3600
3200
2800
I
F
[A]
2400
2000
1600
1200
800
400
0
0
0.5
1
V
F
[V]
1.5
2
2.5
125°C
25°C
5200
4800
4400
4000
3600
3200
I
R
[A]
2800
2400
2000
1600
1200
800
400
0
0
500
1000
V
R
[V]
1500
2000
V
CC
≤
1200 V
di/dt
≤
12 kA/µs
T
vj
= 125 °C
Fig. 14
Typical diode forward characteristics,
chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 8 of 9
I
rr
[A]
ABB [ THE ABB GROUP ]
