5SNA 2400E170100
0.1
Analytical function for transient thermal
impedance:
Z
th(j-c)
[K/W] IGBT, DIODE
0.01
Z
th(j-c)
Diode
Z
th (j-c)
(t) =
∑
R
i
(1 - e
Z
th(j-c)
IGBT
n
- t/
τ
i
)
i
=
1
2
i
0.001
IGBT
1
5.059
202.9
8.432
210
3
0.495
2.01
0.866
7.01
4
0.246
0.52
0.839
1.49
R
i
(K/kW)
τ
i
(ms)
R
i
(K/kW)
τ
i
(ms)
1.201
20.3
1.928
29.6
0.0001
0.001
0.01
0.1
t [s]
1
10
Fig. 16
Thermal impedance vs time
For detailed information refer to:
•
5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
•
5SYA 2043-01 Load – cycle capability of HiPaks
•
5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
DIODE
Doc. No. 5SYA1555-03 Oct 06
ABB [ THE ABB GROUP ]
