5STP 33L2800
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
TAVM
I
TRMS
I
TSM
It
I
TSM
It
2
2
min
typ
max
3740
5880
Unit
A
A
A
kA
2
s
A
kA
2
s
Unit
V
V
mΩ
mA
mA
mA
mA
Half sine wave, T
c
= 70°C
tp = 10 ms, Tj = 125°C,
V
D
=V
R
= 0 V
tp = 8.3 ms, Tj = 125°C,
V
D
=V
R
=0 V
min
typ
60000
18000
65000
17500
max
1.23
0.95
0.1
100
60
500
300
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
Latching current
Symbol Conditions
V
T
V
T0
r
T
I
H
I
L
I
T
= 3000 A, T
j
= 125°C
I
T
= 2000 A - 6000 A, T
j
= 125°C
Tj = 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Switching
Maximum rated values
1)
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Symbol Conditions
di/dt
crit
di/dt
crit
Cont.
T
j
= 125°C, I
TRM
= 4500 A, f = 50 Hz
V
D
≤
0.67⋅V
DRM
,
Cont.
I
FG
= 2 A, t
r
= 0.5 µs
f = 1Hz
T
j
= 125°C, I
TRM
= 4500 A,
V
R
= 200 V, di
T
/dt = -5 A/µs,
V
D
≤
0.67⋅V
DRM
, dv
D
/dt = 20 V/µs,
min
typ
max
250
1000
Unit
A/µs
A/µs
µs
Circuit-commutated turn-off t
q
time
Characteristic values
400
Parameter
Recovery charge
Delay time
Symbol Conditions
Q
rr
t
d
T
j
= 125°C, I
TRM
= 4500 A,
V
R
= 200 V, di
T
/dt = -5 A/µs
V
D
= 0.4⋅V
DRM
, I
FG
= 2 A, t
r
= 0.5 µs
min
2000
typ
max
4000
3
Unit
µAs
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Jan. 02
page 2 of 6
ABB [ THE ABB GROUP ]
