5STP 33L2800
On-state characteristic model:
VT
=
A
+
B
⋅
iT
+
C
⋅
ln(
iT
+
1)
+
D
⋅
IT
Valid for i
T
= 400 – 11000 A
A
7.3117e-1
B
7.9000e-5
C
1.7903e-2
D
2.3140e-3
Fig. 2
On-state characteristics.
T
j
=125°C, 10ms half sine
Fig. 3
On-state characteristics.
Fig. 4
On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5
Max. permissible case temperature vs.
mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Jan. 02
page 4 of 6