5STP 33L2800
Triggering
Maximum rated values
1)
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Gate power loss
Average gate power loss
Characteristic values
Symbol Conditions
V
FGM
I
FGM
V
RGM
P
G
P
GAV
Symbol Conditions
V
GT
I
GT
V
GD
I
GD
T
j
= 25°C
T
j
= 25°C
V
D
= 0.4 x V
DRM
, T
vjmax
= 125°C
V
D
= 0.4 x V
DRM
, T
vjmax
= 125°C
For DC gate current
min
typ
max
12
10
10
3
Unit
V
A
V
W
see Fig. 9
min
typ
max
2.6
400
0.3
10
Unit
V
mA
V
mA
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
j
min
typ
max
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double side cooled
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
-40
min
typ
140
max
7
14
14
1.5
3
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
thJC
(t) =
å
R
i
(1 - e
i
=
1
i
R
i
(K/kW)
τ
i
(s)
1
4.7
0.4787
2
0.853
0.0824
3
1.07
n
- t/
τ
i
)
4
0.49
0.0041
Fig. 1
Transient thermal impedance junction-to case.
0.0104
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Jan. 02
page 3 of 6
ABB [ THE ABB GROUP ]
