DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT45GP120B2DQ2(G)
UNIT
Test Conditions
Capacitance
MIN
TYP
3995
300
55
MAX
Cies
Input Capacitance
Coes
pF
V
Output Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Cres
Reverse Transfer Capacitance
VGEP
7.5
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
VCE = 600V
IC = 45A
3
Qg
185
25
Total Gate Charge
Qge
nC
Gate-Emitter Charge
Qgc
80
Gate-Collector ("Miller") Charge
TJ = 150°C, RG = 5Ω, VGE
=
Reverse Bias Safe Operating Area
RBSOA
td(on)
A
170
15V, L = 100µH,VCE = 960V
Inductive Switching (25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
18
29
VCC = 600V
VGE = 15V
IC = 45A
tr
ns
td(off)
100
38
tf
RG = 5Ω
4
Eon1
Eon2
Turn-on Switching Energy
900
1870
905
18
TJ = +25°C
5
µJ
ns
Turn-on Switching Energy (Diode)
6
Eoff
Turn-off Switching Energy
td(on)
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
tr
VCC =600V
VGE = 15V
IC = 45A
29
td(off)
tf
150
80
Current Fall Time
RG = 5Ω
4 4
Eon1
Eon2
Eoff
Turn-on Switching Energy
900
3080
2255
TJ = +125°C
55
µJ
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
.20
R
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
θJC
θJC
°C/W
gm
R
.61
WT
5.9
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.