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APT45GP120B2DQ2G 参数 Datasheet PDF下载

APT45GP120B2DQ2G图片预览
型号: APT45GP120B2DQ2G
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制双极性晶体管
文件页数/大小: 9 页 / 439 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
APT45GP120B2DQ2(G)  
UNIT  
Test Conditions  
Capacitance  
MIN  
TYP  
3995  
300  
55  
MAX  
Cies  
Input Capacitance  
Coes  
pF  
V
Output Capacitance  
VGE = 0V, VCE = 25V  
f = 1 MHz  
Cres  
Reverse Transfer Capacitance  
VGEP  
7.5  
Gate-to-Emitter Plateau Voltage  
Gate Charge  
VGE = 15V  
VCE = 600V  
IC = 45A  
3
Qg  
185  
25  
Total Gate Charge  
Qge  
nC  
Gate-Emitter Charge  
Qgc  
80  
Gate-Collector ("Miller") Charge  
TJ = 150°C, RG = 5Ω, VGE  
=
Reverse Bias Safe Operating Area  
RBSOA  
td(on)  
A
170  
15V, L = 100µH,VCE = 960V  
Inductive Switching (25°C)  
Turn-on Delay Time  
Current Rise Time  
Turn-off Delay Time  
Current Fall Time  
18  
29  
VCC = 600V  
VGE = 15V  
IC = 45A  
tr  
ns  
td(off)  
100  
38  
tf  
RG = 5Ω  
4
Eon1  
Eon2  
Turn-on Switching Energy  
900  
1870  
905  
18  
TJ = +25°C  
5
µJ  
ns  
Turn-on Switching Energy (Diode)  
6
Eoff  
Turn-off Switching Energy  
td(on)  
Inductive Switching (125°C)  
Turn-on Delay Time  
Current Rise Time  
Turn-off Delay Time  
tr  
VCC =600V  
VGE = 15V  
IC = 45A  
29  
td(off)  
tf  
150  
80  
Current Fall Time  
RG = 5Ω  
4 4  
Eon1  
Eon2  
Eoff  
Turn-on Switching Energy  
900  
3080  
2255  
TJ = +125°C  
55  
µJ  
Turn-on Switching Energy (Diode)  
6
Turn-off Switching Energy  
THERMAL AND MECHANICAL CHARACTERISTICS  
Symbol Characteristic  
UNIT  
MIN  
TYP  
MAX  
.20  
R
Junction to Case (IGBT)  
Junction to Case (DIODE)  
Package Weight  
θJC  
θJC  
°C/W  
gm  
R
.61  
WT  
5.9  
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.  
For Combi devices, Ices includes both IGBT and FRED leakages  
See MIL-STD-750 Method 3471.  
Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current  
adding to the IGBT turn-on loss. (See Figure 24.)  
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching  
loss. (See Figures 21, 22.)  
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)  
Continuous current limited by package lead temperature.  
APT Reserves the right to change, without notice, the specifications and information contained herein.