TYPICAL PERFORMANCE CURVES
90
80
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
APT45GP120B2DQ2(G)
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
160
140
120
100
FIGURE 1, Output Characteristics(T
J
= 25°C)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
14
12
10
FIGURE 2, Output Characteristics (T
J
= 125°C)
I = 45A
C
T = 25°C
J
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
V
CE
= 240V
V
CE
= 600V
T
J
= -55°C
80
60
40
20
0
T
J
= 25°C
8
6
4
2
0
V
CE
= 960V
T
J
= 125°C
0
2 3 4
5 6
7 8
9 10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
1
0
20 40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
I
C
= 90A
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
.05
0
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
4
I
C
= 90A
I
C
= 45A
I
C
= 45A
3
I
C
= 22.5A
2
I
C
= 22.5A
1
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
0
6
25
50
75
100
125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
160
0
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
140
120
100
80
60
40
20
6-2005
050-7433
Rev A
Lead Temperature
Limited
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
-50
ADPOW [ ADVANCED POWER TECHNOLOGY ]
