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ACT-F128K32N-090P3I 参数 Datasheet PDF下载

ACT-F128K32N-090P3I图片预览
型号: ACT-F128K32N-090P3I
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- F128K32高速4兆位闪存多芯片模块 [ACT-F128K32 High Speed 4 Megabit FLASH Multichip Module]
分类和应用: 闪存
文件页数/大小: 20 页 / 203 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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Table 3 — Commands Definitions  
Bus  
Write  
Fourth Bus  
Read/Write  
First Bus Write Second Bus Write Third Bus Write  
Cycle Cycle Cycle  
Fifth Bus Write Sixth Bus Write  
Cycle Cycle  
Command  
Sequence  
Cycle  
Cycle  
Req’d Addr  
Data  
AAH  
AAH  
AAH  
AAH  
Addr  
Data  
55H  
55H  
55H  
55H  
Addr  
Data  
F0H  
A0H  
80H  
80H  
Addr  
Data  
RD  
Addr  
Data  
Addr  
Data  
Read/Reset  
Byte Program  
Chip Erase  
4
6
6
6
5555H  
5555H  
5555H  
5555H  
2AAAH  
2AAAH  
2AAAH  
2AAAH  
5555H  
5555H  
5555H  
5555H  
RA  
PA  
PD  
5555H  
5555H  
AAH  
AAH  
2AAAH 55H  
2AAAH 55H  
5555H 10H  
SA 30H  
Sector Erase  
NOTES:  
1. Address bit A15 = X = Don't Care. Write Sequences may be initiated with A15 in either state.  
2. Address bit A16 = X = Don't Care for all address commands except for Program Address (PA) and Sector Address (SA).  
3. RA = Address of the memory location to be read  
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.  
SA = Address of the sector to be erased. The combination of A16, A15, A14 will uniquely select any sector.  
4. RD = Data read from location RA during read Operation.  
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.  
default value ensures that no spurious alteration of the  
memory content occurs during the power transition.  
CHIP ERASE  
Chip erase is a six bus cycle operation. There are two  
'unlock' write cycles. These are followed by writing the  
“set-up” command. Two more “unlock” write cycles are  
then followed by the chip erase command.  
Refer to the AC Read Characteristics and Figure 7 for the  
specific timing parameters.  
BYTE PROGRAMING  
Chip erase does not require the user to program the  
device prior to erase. Upon executing the Embedded  
Erase Algorithm command sequence (Figure 4) the  
device will automatically program and verify the entire  
memory for an all zero data pattem prior to electrical  
erase. The erase is performed concurrently on all sectors  
at the same time . The system is not required to provide  
any controls or timings during these operations. Note:  
Post Erase data state is all "1"s.  
The device is programmed on a byte-byte basis.  
Programming is a four bus cycle operation. There are  
two "unlock" write cycles. These are followed by the  
program set-up command and data write cycles.  
Addresses are latched on the falling edge of CE or WE,  
whichever occurs later, while the data is latched on the  
rising edge of CE or WE whichever occurs first. The  
rising edge of CE or WE (whichever happens first) begins  
programming using the Embedded Program Algorithm.  
Upon executing the program algorithm command  
sequence the system is not required to provide further  
controls or timings. The device will automatically provide  
adequate internally generated program pulses and verify  
the programmed cell.  
The automatic erase begins on the rising edge of the last  
WE pulse in the command sequence and terminates  
when the data on D7 is "1" (see Write Operation Status  
section - Table 3) at which time the device retums to read  
mode. See Figures 4 and 9.  
The automatic programming operation is completed  
when the data on D7 (also used as Data Polling) is  
equivalent to data written to this bit at which time the  
device returns to the read mode and addresses are no  
longer latched. Therefore, the device requires that a valid  
address be supplied by the system at this particular  
instance of time for Data Polling operations. Data Polling  
must be performed at the memory location which is being  
programmed.  
SECTOR ERASE  
Sector erase is a six bus cycle operation. There are two  
"unlock" write cycles. These are followed by writing the  
"setup" command. Two more "unlock" write cycles are  
then followed by the sector erase command. The sector  
address (any address location within the desired sector)  
is latched on the falling edge of WE, while the command  
(30H) is latched on the rising edge of WE. After a  
time-out of 80µs from the rising edge of the last sector  
erase command, the sector erase operation will begin.  
Any commands written to the chip during the Embedded  
Program Algorithm will be ignored.  
Multiple sectors may be erased concurrently by writing  
the six bus cycle operations as described above. This  
sequence is followed with writes of the sector erase  
command to addresses in other sectors desired to be  
concurrently erased. The time between writes must be  
less than 80µs otherwise that command will not be  
accepted and erasure will start. It is recommended that  
processor interrupts be disabled during this time to  
Programming is allowed in any sequence and across  
sector boundaries. Beware that a data "0" cannot be  
programmed back to a “1". Attempting to do so may  
cause the device to exceed programming time limits (D5  
= 1) or result in an apparent success, according to the  
data polling algorithm, but a read from reset/read mode  
will show that the data is still “0". Only erase operations  
can convert “0"s to “1"s.  
guarantee this condition.  
The interrupts can be  
Figure 3 illustrates the programming algorithm using  
typical command strings and bus operations.  
re-enabled after the last Sector Erase command is  
written. A time-out of 80µs from the rising edge of the  
last WE will initiate the execution of the Sector Erase  
command(s). If another falling edge of the WE occurs  
6
Aeroflex Circuit Technology  
SCD1667 REV A 4/28/97 Plainview NY (516) 694-6700