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Mode
Reset
Status
ID Read
code
Verify-0
Verify-1
Converge
Program
Erase
D
IN[3]
Write
[3]
data
00h
01h
02h
04h
08h
10h
40h
80h
A
IN[4]
Write
[4]
address
x
x
0000h
0001h
A
IN
A
IN
A
IN
A
IN
A
IN
D
IN[4]
data
x
x
x
x
x
x
00h
D
IN
FFh
Read address
0000h
0000h
0000h
0001h
A
IN
A
IN
A
IN
A
IN
A
IN
Read data
Status
Status
Mfr. code
Device code
D
OUT
D
OUT
Status
Status
Status
Read delay
100 ns
100 ns
52h 100 ns
04h 100 ns
25 µs
25 µs
100 ns
100 ns
100 ns
Maximum time out
250 µs
250 µs
250 µs
250 µs
250 µs
250 µs
250 µs
1000 µs
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Individual write commands are used together in eight program and erase algorithms to guarantee the AS29F010 operating margins for the
life of the part. Refer to the AS29F010 Programming Specification for details on the algorithms for program and erase operation .
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Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.0
–0.5
Typ
5.0
0
-
-
+7
D
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Max
5.5
0
V
CC
+ 1.0
0.8
Unit
V
V
V
V
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Parameter
Input voltage (Input or DQ pin)
Input voltage (A9 pin)
Output voltage
Power supply voltage
Operating temperature
Storage temperature (plastic)
Short circuit output current
Latch-up current
Symbol
V
IN
V
IN
V
OUT
V
CC
T
OPR
T
STG
I
OUT
I
IN
Min
–1.0
–1.0
–1.0
+4.5
–55
–65
-
-
Max
V
CC
+ 1.0
+13.0
V
CC
+ 1.0
+5.5
+125
+125
100
±100
Unit
V
V
V
V
°C
°C
mA
mA
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
7
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ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
