AWT6167R
Table 7: Electrical Characteristics for GSM900
Unless otherwise stated (V
BATT
= 3.5 V
,
P
IN
= 3.0 dBm, Pulse Width =1154
µ
s, Duty 25%,
Z
IN
= Z
OUT
= 50
Ω,
T
C
= 25 °C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
PARAMETER
Operating Frequency (F
O
)
Input Power
Output Power, P
MAX
Degraded Output Power
PAE @ P
MAX
Forward Isolation 1
Forward Isolation 2
Cross Isolation
(Coupling of GSM 2fo and 3fo to
DCS/PCS port)
Harmonics
2fo, 3fo
n*F
O
, (n
≥
4), F
O
≤
12.75 GHz
MIN
880
0
34.5
32.5
50
-
-
TYP
-
3.0
35.0
33.5
55
-38
-25
MAX
915
5
-
-
-
-33
-20
UNIT
MHz
dB m
dB m
dB m
%
dB m
dB m
Freq = 880 to 915 MHz
V
BATT
= 3.0 V, T
C
= 85 °C,
P
IN
= 0 dBm
Freq = 880 to 915MHz
TX_EN = LOW, V
RAMP
= 0.2 V
P
IN
= 5 dBm
TX_EN = HIGH, V
RAMP
= 0.2 V,
P
IN
= 5 dBm
P
OUT
≤
34.5 dBm
COMMENTS
-
-23
-17
dB m
-
-
-22
-30
-10
-10
dB m
P
OUT
≤
34.5 dBm
VSWR = 8:1 All Phases, P
OUT
≤
34.5 dBm
Stability
-
-
Ruggedness
-
-
-
-
-36
-30
10:1
dB m
dB m
VSWR
F
OUT
<
1 GHz
F
OUT
>
1 GHz
All load phases,
P
OUT
≤
34.5 dBm
F
TX
= 915 MHz,
RBW = 100 kHz,
F
RX
= 925 to 935 MHz,
P
OUT
≤
34.5 dBm
F
TX
= 915 MHz,
RBW = 100 kHz,
F
RX
= 935 to 960MHz,
P
OUT
≤
34.5 dBm
P
OUT
≤
34.5 dBm
-
RX Noise Power
-
-84
-77
dB m
-87
-83
dB m
Input VSWR
-
1.5:1
2.5:1
-
PRELIMINARY DATA SHEET - Rev 1.0
06/2005
5
ANADIGICS [ ANADIGICS, INC ]
