20V P-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(T
J
=25°C unless otherwise noted)
Conditions
V
GS
=0V, I
D
=-250µA
V
GS
=-4.5V, I
D
=-2.4A
V
GS
=-2.5V, I
D
=-1.8A
V
GS
=-4.5V, V
DS
=-5V (Pulsed)
V
GS
=V
DS
, I
D
=-250µA
V
GS
=±12V, V
DS
=0V
V
GS
=0V, V
DS
=-20V
V
GS
=0V, V
DS
=-16V, T
J
=70°C
3
V
DS
=-5V, I
D
=-2.4A
V
DS
=-15V,
V
DS
=-15V,
V
DS
=-15V,
V
DS
=-15V,
V
DS
=-15V,
V
DS
=-15V,
V
DS
=-15V,
2
AAT8401
Min
-20
Typ
Max
Units
V
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage
R
DS(ON)
I
D(ON)
V
GS(th)
I
GSS
I
DSS
Drain-Source ON-Resistance
On-State Drain Current
2
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Source Leakage Current
2
88
146
-9
-0.6
100
175
mΩ
A
V
nA
µA
S
±100
-1
-5
4
4
0.6
1.4
6.5
13
15
20
-1.3
-0.9
g
fs
Forward Transconductance
2
Dynamic Characteristics
3
Q
G
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
I
S
Continuous Diode Current
1
R
D
=5.6Ω,
R
D
=5.6Ω,
R
D
=5.6Ω,
R
D
=5.6Ω,
R
D
=5.6Ω,
R
D
=5.6Ω,
R
D
=5.6Ω,
V
GS
=-4.5V
V
GS
=-4.5V
V
GS
=-4.5V
V
GS
=-4.5V,
V
GS
=-4.5V,
V
GS
=-4.5V,
V
GS
=-4.5V,
nC
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
ns
V
GS
=0, I
S
=-2.4A
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design, howev-
er R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
8401.2003.06.0.61
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
