20V P-Channel Power MOSFET
Typical Characteristics
Gate Charge
5
4
3
2
1
0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
AAT8401
Source-Drain Diode Forward Voltage
10
V
D
= 15V
I
D
= 2.7A
T
J
= 150°C
I
S
(A)
1
V
GS
(V)
T
J
= 25°C
0
1
2
3
4
5
Q
G
, Charge (nC)
V
SD
(V)
Capacitance
750
600
450
300
150
0
0
-5
-10
-15
-20
30
25
Single Pulse Power, Junction to Ambient
Capacitance (pF)
Power (W)
C
iss
20
15
10
5
0
0.001
C
rss
C
oss
0.01
0.1
1
10
100
1000
V
DS
(V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective
Transient Thermal Impedance
10
1
0.1
0.2
0.5
0.1
Single Pulse
.05
0.01
0.0001
0.001
.02
0.01
0.1
1
10
100
1000
Time (s)
4
8401.2003.06.0.61