APM2103SG
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
S
*
*
(T
A
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
T
A
=25°C
T
A
=100°C
V
GS
=-4.5V
Rating
-20
±12
-2.5
-10
-1.3
150
-55 to 150
1.14
0.45
110
b
Unit
V
A
A
°C
W
°C/W
I
DM
*
T
J
T
STG
P
D
*
R
θJA
*
Thermal Resistance-Junction to Ambient
2
Notes: *Surface Mounted on 1in
pad area, t
≤
5sec.
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C Unless Otherwise Noted)
APM2103SG
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250µA
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
= V
GS
, I
DS
=-250µA
V
GS
=±10V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-2.5A
R
DS(ON)
a
-20
-1
-30
-0.5
-0.7
-1
±10
88
120
160
-0.8
110
160
260
-1.3
V
µA
V
µA
Drain-Source On-State Resistance V
GS
=-2.5V, I
DS
=-2A
V
GS
=-1.8V, I
DS
=-1A
mΩ
V
SD
a
Diode Forward Voltage
b
I
SD
=-1.3A, V
GS
=0V
V
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
5.8
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-2.5A
1.3
1.1
8
nC
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
