APM2103SG
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8
V
GS
= -4.5V
1.6
I
DS
= -2.5A
Source-Drain Diode Forward
10
Normalized On Resistance
1.4
-I
S
- Source Current (A)
T
j
=150 C
T
j
=25 C
o
o
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
R
ON
@T
j
=25 C: 88m
Ω
0
25
50
75 100 125 150
o
1
0.1
0.0
0.3
0.6
0.9
1.2
1.5
1.8
T
j
- Junction Temperature (°C)
-V
SD
- Source - Drain Voltage (V)
Capacitance
500
450
5.0
Gate Charge
V
DS
= -10V
I
DS
= -2.5A
Frequency=1MHz
4.5
-V
GS
- Gate - Source Voltage (V)
400
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
7
C - Capacitance (nC)
350
300
250
200
150
100
50 Crss
0
0
4
8
12
Coss
Ciss
16
20
-V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
