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APM2103SGC-TR 参数 Datasheet PDF下载

APM2103SGC-TR图片预览
型号: APM2103SGC-TR
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道增强型MOSFET [Dual P-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 8 页 / 153 K
品牌: ANPEC [ ANPEC ELECTRONICS COROPRATION ]
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APM2103SG
Electrical Characteristics (Cont.)
Symbol
Parameter
b
(T
A
= 25°C unless otherwise noted)
Test Condition
APM2103SG
Min.
Typ.
Max.
Unit
Dynamic Characteristics
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
t
rr
Q
rr
Notes:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
360
80
50
8
22
29
32
15
41
53
59
ns
nc
ns
pF
V
DD
=-10V, R
L
=10Ω,
I
DS
=1A, V
GEN
=-4.5V,
R
G
=6Ω
I
SD
=-2.5A
dl
SD
/dt =100A/µs
14
6
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
3
www.anpec.com.tw