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APM3009NGC-TR 参数 Datasheet PDF下载

APM3009NGC-TR图片预览
型号: APM3009NGC-TR
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 12 页 / 718 K
品牌: ANPEC [ ANPEC ELECTRONICS COROPRATION ]
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APM3009N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
temperature
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183
°
C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
3
°
C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
220 +5/-0
°
C or 235 +5/-0
°
C
6
°
C /second max.
6 minutes max.
VPR
10
°
C /second max.
°
Average ramp-up rate(183 C to Peak)
Preheat temperature 125
±
25
°
C)
°
Temperature maintained above 183 C
Time within 5
°
C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25
°
C to peak temperature
60 seconds
215~ 219
°
C or 235 +5/-0
°
C
10
°
C /second max.
Package Reflow Conditions
pkg. thickness
2.5mm
and all bags
Convection220 +5/-0
°
C
VPR 215-219
°
C
°
IR/Convection 220 +5/-0 C
pkg. thickness < 2.5mm and
pkg. volume
350 mm
pkg. thickness < 2.5mm and pkg.
volume <
Convection 235 +5/-0
°
C
VPR 235 +5/-0
°
C
°
IR/Convection 235 +5/-0 C
Copyright
ANPEC Electronics Corp.
Rev. A.3 - May., 2002
10
www.anpec.com.tw