APM3009N
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
0.030
On-Resistaence vs. Junction Temperature
1.6
I
DS
=35A
R
DS (ON)
-On-Resistance (Ω)
R
DS(ON)
-On Resistance (Ω)
(Normalized)
0.025
V
GS
=10V
I
DS
=35A
1.4
0.020
1.2
0.015
1.0
0.010
0.005
0.8
0.000
3
4
5
6
7
8
9
10
0.6
-50
-25
0
25
50
75
100
125
150
Gate Voltage (V)
T
j
-Junction Temperature (°C)
On-Resistaence vs. Junction Temperature
10
10
Gate Charge
V
DS
=15V
I
DS
=20A
8
R
DS(ON)
-On Resistance (Ω)
9
8
V
GS
-Gate-to-Source Voltage (V)
0
25
50
75
100
125
150
V
GS
=10V
I
DS
=35A
6
7
4
6
5
2
4
-50
-25
0
0
10
20
30
40
50
T
j
-Junction Temperature (°C)
Q
G
-Total-Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
Rev. A.3 - May., 2002
4
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