APM3009N
Absolute Maximum Ratings Cont.
Symbol
P
D
Parameter
Maximum Power Dissipation
T
A
=25
°
C
T
A
=100°C
T
J
,T
STG
R
θJA
R
θJC
Maximum Operating and Storage Junction Temperature
Thermal Resistance – Junction to Ambient
TO-252
TO-263
Thermal Resistance – Junction to Case
TO-252
TO-263
TO-252
TO-263
TO-252
TO-263
(T
A
= 25°C unless otherwise noted)
Rating
50
62.5
20
25
-55 to 150
50
60
2.5
2
°C
°C/W
°C/W
W
Unit
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)a
Parameter
Drain-Source Breakdown
V lt Gate Voltage Drain
Zero
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
(T
A
= 25°C unless otherwise noted)
Test Condition
APM3009N
Typ.
Max.
Min.
30
1
1
7
11
0.6
22
12.8
5
10
7
35
10
2400
500
240
3
±100
9
15
1.3
28
nC
15
13
50
20
Unit
V
µA
V
nA
mΩ
V
V
GS
=0V, I
DS
=250µA
V
DS
=24V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=35A
V
GS
=4.5V, I
DS
=20A
I
SD
=35A, V
GS
=0V
V
DS
=15V, I
DS
=20A
V
GS
=4.5V,
V
DD
=15V, I
DS
=1A,
V
GEN
=10V, R
G
= 0.2Ω
V
GS
=0V
V
DS
=15V
Frequency =1.0MHz
V
SDa
Dynamic
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
ns
pF
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.3 - May., 2002
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
