APM4500
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
P
D
T
J
T
STG
R
θjA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
T
A
=25°C
T
A
=100°C
(T
A
= 25°C unless otherwise noted)
N-Channel
20
±12
8
35
2.5
1.0
150
-55 to 150
62.5
P-Channel
-20
±12
-4.3
-17
2.5
1.0
Unit
V
A
W
°C
°C
°C/W
* Surface Mounted on FR4 Board, t
≤
10 sec.
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C unless otherwise noted)
APM4500
Unit
Min. Typ. Max.
N-Ch
20
-20
1
-1
0.5
0.7
1
-1
±100
±100
22
30
80
105
0.8
-0.7
26
36
90
115
1.3
-1.3
V
mΩ
nA
Test Condition
V
GS
=0V , I
DS
=250µA
V
DS
=16V , V
GS
=0V
V
DS
=-16V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250µA
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±12V , V
DS
=0V
V
GS
=±12V , V
DS
=0V
V
GS
=4.5V , I
DS
=8A
V
GS
=2.5V , I
DS
=5.2A
V
GS
=-4.5V , I
DS
=-4.3A
V
GS
=-2.5V , I
DS
=-2A
I
SD
=1.7A , V
GS
=0V
I
SD
=-1.25A , V
GS
=0V
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
µA
V
P-Ch -0.45
R
DS(ON)
a
Drain-Source On-state
Resistance
V
SD
a
Diode Forward Voltage
Notes
a
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
