AO4492L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
7V
60
I
D
(A)
40
20
V
GS
=3V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
14
12
R
DS(ON)
(m
Ω
)
10
8
6
4
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
V
GS
=10V
V
GS
=4.5V
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=10V
I
D
=13A
4V
I
D
(A)
30
20
10
0
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
10V
5V
4.5
60
50
40
V
DS
=5V
3.5V
17
5
2
10
V
GS
=4.5V
I
D
=11A
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
1.0E+02
30
I
D
=13A
25
20
15
10
5
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
40
Alpha & Omega Semiconductor, Ltd.
R
DS(ON)
(m
Ω
)
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
