AO4492L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=13A
Capacitance (pF)
1200
1000
C
iss
800
600
400
200
0
0
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
8
V
GS
(Volts)
6
4
C
oss
2
0
100
I
D
(A), Peak Avalanche Current
T
A
=25°C
80
60
40
20
0
0.000001
T
A
=125°C
T
A
=150°C
T
A
=100°C
10µs
I
D
(Amps)
1000.0
100.0
10.0
1.0
0.1
0.0
0.01
R
DS(ON)
limited
10µs
100µs
1ms
10ms
100ms
10s
T
J(Max)
=150°C
T
A
=25°C
0.1
DC
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
(Note C)
1
V
DS
(Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
T
A
=25°C
100
Power (W)
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
