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AO4821 参数 Datasheet PDF下载

AO4821图片预览
型号: AO4821
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道增强型场效应晶体管 [Dual P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 115 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4821
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-9.6V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±4.5V
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-8A
T
J
=125°C
V
GS
=-2.5V, I
D
=-8A
V
GS
=-1.8V, I
D
=-5A
V
DS
=-5V, I
D
=-8A
-0.3
-20
-0.55
14.8
19
18.3
22.4
34
-0.74
Min
-12
-1
-5
±1
±10
-1
A
18
23
22
29
-1
-2.5
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
Typ
Max
Units
V
µA
µA
µA
Static Drain-Source On-Resistance
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
D(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=-6V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
3960
910
757
6.9
37
4.4
11
15
43
158
95
63
56
V
GS
=-4.5V, V
DS
=-6V, I
D
=-8A
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=-8A, dI/dt=100A/µs
I
F
=-8A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.