AO4821
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-8.0V
15
10
V
DS
=-5V
8
6
125°C
4
25°C
V
GS
=-1.0V
0
0
0.2
0.4
0.6
0.8
1
-V
DS
(Volts)
Fig 1: On-Region Characteristics
30
Normalized On-Resistance
1.6
I
D
=-8A, V
GS
=-2.5V
1.4
I
D
=-5A, V
GS
=-1.8V
2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
10
5
25
R
DS(ON)
(m
Ω
)
V
GS
=-1.8V
20
V
GS
=-2.5V
-I
D
(A)
-1.5V
1.2
I
D
=-8, V
GS
=-4.5V
15
V
GS
=-4.5V
10
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
45
40
R
DS(ON)
(m
Ω
)
35
30
25
20
15
10
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=-8A
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
1E+00
1E-01
-I
S
(A)
25°C
1E-02
1E-03
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
