AOD604
P-Channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
10
V
DS
=-20V
I
D
=-8A
Capacitance (pF)
1200
1000
800
600
400
C
oss
200
0
0
8
12
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
4
16
0
C
rss
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
iss
8
-V
GS
(Volts)
6
4
2
0
100.0
T
J(Max)
=175°C, T
A
=25°C
10µs
-I
D
(Amps)
Power (W)
10.0
R
DS(ON)
limited
100µs
1.0
DC
1ms
200
160
120
80
40
0
0.0001
T
J(Max)
=175°C
T
A
=25°C
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
10
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
