AOD604
P-Channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
10
-I
D
(A), Peak Avalanche Current
8
Power Dissipation (W)
L
⋅
I
D
t
A
=
BV
−
V
DD
60
50
40
30
20
10
0
6
4
T
A
=25°C
2
0.00001
0.0001
0.001
0
25
50
75
100
125
150
175
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
10
8
6
4
2
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Power (W)
60
50
40
30
20
10
0
0.001
T
A
=25°C
Current rating -I
D
(A)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.001
0.00001
T
100
1000
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
