AUSTIN SEMICONDUCTOR, INC.
ADVANCE INFORMATION
Austin Semiconductor, Inc.
Data Retention and Endurance
Parameter
DATA
R
NV
C
Description
Data Retention
Nonvolatile STORE Operation
Min
20
200
Unit
Years
Cycles
AS8nvLC512K32
nvSRAM
Capacitance
In the following table, the capacitance parameters are listed.
12
Parameter
Description
C
IN
Input Capacitance (Addr, OE\, HSB\)
C
IN
C
OUT(DQ)
Input Capacitance (CE\
1 4
, WE\
1 4
I/O Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 0 to 3.0V
Min
50
20
25
Unit
pF
pF
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
12
Parameter
JA
JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
44 TSOP II
TBD
TBD
44 Gullwing Unit
TBD
TBD
o
C/W
C/W
o
AC Test Loads
577
3.0V
OUTPUT
30 pF
R2
789
R1
577
3.0V
OUTPUT
5 pF
R2
789
R1
for tri-state specs
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <3 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
12. These parameters are guaranteed but not tested.
AS8nvLC512K32
Rev. 0.0 08/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
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