AMMC-5026
2–35 GHz GaAs MMIC Traveling Wave Amplifier
Data Sheet
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
3050 x 840 µm (119 x 33 mils)
±10 µm (±0.4 mils)
100 ± 10 µm (4 ± 0.4 mils)
75 x 75 µm (2.9 ± 0.4 mils)
Description
The AMMC-5026 is a broadband PHEMT GaAs MMIC
Traveling Wave Amplifier (TWA) designed for medium
output power and high gain over the full 2 GHz to 35 GHz
frequency range. The design employs a 6-section cascode
connected FET structure to provide flat gain and medium
power as well as uniform group delay. For improved reli-
ability and moisture protection, the die is passivated at
the active areas.
Features
•
Frequency range: 2 – 35 GHz
•
Gain: 10.5 dB
•
Gain flatness: ±0.8 dB
•
Return loss:
Input 17 dB, Output: 15 dB
•
Output power (P-1dB):
24 dBm at 10 GHz
23 dBm at 20 GHz
22 dBm at 26 GHz
•
Noise figure (6–19 GHz): ≤ 4 dB
Applications
•
Broadband gain block
•
Broadband driver amplifier
•
10 Gb/s Fiber Optics
Absolute Maximum Ratings
[1]
Symbol
V
dd
I
dd
V
g1
I
g1
V
g2
I
g2
P
in
T
ch
T
b
T
stg
T
max
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
First Gate Voltage
First Gate Current
Second Gate Voltage
Second Gate Current
CW Input Power
Channel Temperature
Operating Backside Temperature
Storage Temperature
Max. Assembly Temp (60 sec max)
Units
V
mA
V
mA
V
mA
dBm
°C
°C
°C
°C
Min.
Max.
10
450
-5
-9
-3
-10
23
+150
-55
-65
+165
+300
+5
+3.5
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this
device.