AMMC-5026 DC Specifications/Physical Properties
[1]
Symbol
I
dss
V
p1
V
g2
I
dsoff
(V
g1
)
θ
ch-b
Parameters and Test Conditions
Saturated Drain Current
(V
dd
=7 V, V
g1
=0 V, V
g2
=open circuit)
First Gate Pinch-off Voltage
(V
dd
=7 V, I
dd
=0.1 I
dss
, V
g2
=open circuit)
Second Gate Self-bias Voltage
(V
dd
=7 V, I
dd
=150 mA, V
g2
=open circuit)
First Gate Pinch-off Current
(V
dd
=7 V, V
g1
=3.5 V, V
g2
=open circuit)
Thermal Resistance
[2]
(Backside temperature, T
b
= 25°C)
Units
mA
V
V
mA
°C/W
Min.
250
Typ.
350
-1.2
3.5
75
28
Max.
450
Notes:
1. Backside temperature T
b
= 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θ
ch-b
) = 38°C/W at T
channel
(T
c
) = 150°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (T
b
) = 25°C calculated from measured data.
RF Specifications
[3,4]
Symbol
|S
21
|
2
∆|S
21
|
2
RL
in
RL
out
|S
12
|
2
P
-1dB
P
sat
OIP3
NF
H2
H3
(V
dd
= 7V, I
dd
(Q) = 150 mA, Z
in
= Z
0
= 50Ω)
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power @ 1 dB Gain Compression
Saturated Output Power
f = 10 GHz
f = 10 GHz
Units
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dBc
dBc
Min.
8.5
Typ.
10.5
±0.75
Max.
12.5
±1.5
13
12
23
22
17
15
26
24
26
31
3.6
4.3
-20
-30
-17.5
-28
Output 3
rd
Order Intercept Point,
RF
in1
= RF
in2
= - 20 dBm, f = 10 GHz,
∆f
= 2 MHz
Noise Figure
Second Harmonic (P
in
= 12 dBm at 10 GHz)
Third Harmonic (P
in
= 12 dBm at 10 GHz)
f = 10 GHz
f = 20 GHz
Notes:
1. Data measured in wafer form, T
chuck
= 25°C.
2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.
2
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
