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BS62LV4006ECG70 参数 Datasheet PDF下载

BS62LV4006ECG70图片预览
型号: BS62LV4006ECG70
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗CMOS SRAM 512K ×8位 [Very Low Power CMOS SRAM 512K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 400 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BS62LV4006
n
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
WAVEFORM
INPUTS
MUST BE
STEADY
MAY CHANGE
FROM
“H”
TO
“L”
MAY CHANGE
FROM
“L”
TO
“H”
DON’T CARE
ANY CHANGE
PERMITTED
DOES NOT
APPLY
OUTPUTS
MUST BE
STEADY
WILL BE CHANGE
FROM
“H”
TO
“L”
WILL BE CHANGE
FROM
“L”
TO
“H”
CHANGE :
STATE UNKNOW
CENTER LINE IS
HIGH INPEDANCE
“OFF”
STATE
n
KEY TO SWITCHING WAVEFORMS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing
Reference Level
Output Load
t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
Others
Vcc / 0V
1V/ns
0.5Vcc
C
L
= 5pF+1TTL
C
L
= 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
C
L(1)
V
CC
GND
10%
90%
90%
10%
→ ←
Rise Time :
1V/ns
→ ←
Fall Time :
1V/ns
1. Including jig and scope capacitance.
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +85 C)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
CYCLE TIME : 55ns
(V
CC
= 3.0~5.5V)
MIN. TYP. MAX.
55
--
--
--
10
5
--
--
10
--
--
--
--
--
--
--
--
--
--
55
55
30
--
--
30
25
--
CYCLE TIME : 70ns
(V
CC
= 2.7~5.5V)
MIN. TYP. MAX.
70
--
--
--
10
5
--
--
10
--
--
--
--
--
--
--
--
--
--
70
70
35
--
--
35
30
--
O
O
DESCRIPTION
UNITS
t
AVAX
t
AVQX
t
E1LQV
t
GLQV
t
E1LQX
t
GLQX
t
E1HQZ
t
GHQZ
t
AVQX
t
RC
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
t
OH
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Output Enable to Output High Z
Data Hold from Address Change
ns
ns
ns
ns
ns
ns
ns
ns
ns
R0201-BS62LV4006
4
Revision 1.4
May.
2006