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BS62LV4006ECG70 参数 Datasheet PDF下载

BS62LV4006ECG70图片预览
型号: BS62LV4006ECG70
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗CMOS SRAM 512K ×8位 [Very Low Power CMOS SRAM 512K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 400 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BS62LV4006
n
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
t
RC
ADDRESS
t
OH
D
OUT
t
AA
t
OH
READ CYCLE 2
(1,3,4)
CE
t
ACS
t
CLZ
D
OUT
(5)
t
CHZ
(5)
READ CYCLE 3
(1, 4)
t
RC
ADDRESS
t
AA
OE
t
OE
CE
(5)
t
OH
t
OLZ
t
ACS
t
CLZ
t
OHZ
t
CHZ
(5)
(1,5)
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = V
IL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BS62LV4006
5
Revision 1.4
May.
2006