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BS62LV4007TC-70 参数 Datasheet PDF下载

BS62LV4007TC-70图片预览
型号: BS62LV4007TC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 512K ×8位 [Very Low Power/Voltage CMOS SRAM 512K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 374 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
ORDERING INFORMATION
BS62LV4007
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
GRADE
C: +0
o
C ~ +70
o
C
I: -40
o
C ~ +85
o
C
PACKAGE
S: SOP
E: TSOP 2
ST: Small TSOP
T: TSOP
P: PDIP
BS62LV4007
X X
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
PACKAGE DIMENSIONS
WITH PLATING
b
c c1
BASE METAL
b1
SECTION A-A
SOP -32
R0201-BS62LV4007
8
Revision 1.1
Jan.
2004