BSI
DC ELECTRICAL CHARACTERISTICS
( TA = -40
o
C to + 85
o
C )
PARAMETER
NAME
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
(4)
I
CCSB
I
CCSB1
(5)
BS62LV8006
TEST CONDITIONS
Vcc=5V
PARAMETER
Guaranteed Input Low
Voltage
(3)
Guaranteed Input High
Voltage
(3)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
Standby Current-CMOS
MIN. TYP.
(1)
MAX.
-0.5
2.2
--
--
--
2.4
--
--
--
--
--
--
--
--
--
--
--
--
--
8
0.8
Vcc+0.3
1
1
0.4
--
76
61
2
110
UNITS
V
V
uA
uA
V
V
mA
mA
uA
Vcc=5V
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE1 = V
IH
or CE2 = V
IL
or
OE = V
IH
, V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2mA
Vcc = Min, I
OH
= -1mA
CE1= V
IL
, CE2= V
IH,
I
DQ
= 0mA, F = Fmax
(2)
55ns
70ns
Vcc=5V
Vcc=5V
Vcc=5V
CE1 = V
IH
or CE2= V
IL,
I
DQ
= 0mA
CE1≧Vcc-0.2V or CE2≦0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
Vcc=5V
Vcc=5V
1. Typical characteristics are at TA = 25
o
C.
2. Fmax = 1/t
RC
.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc
_Max.
is 75mA@55ns/0~70
o
C. ; Icc
_Max.
is 60mA@70ns/0~70
o
C.
5.I
cc
s
B1
is 55uA at Vcc=5.0V and T
A
=70
o
C.
DATA RETENTION CHARACTERISTICS
( TA = -40 to + 85
o
C )
SYMBOL
V
DR
PARAMETER
Vcc for Data Retention
TEST CONDITIONS
CE1≧ Vcc - 0.2V or CE2
≦
0.2V,
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
CE1
≧
Vcc - 0.2V or CE2
≦
0.2V,
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
MIN.
1.5
TYP.
(1)
--
MAX.
--
UNITS
V
I
CCDR
(3)
t
CDR
t
R
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
--
0
0.8
--
--
2.5
--
--
uA
ns
ns
See Retention Waveform
T
RC (2)
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
3. I
cc
DR
(Max.) is 1.3uA at T
A
=70
O
C.
LOW V
CC
DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
Data Retention Mode
V
DR
≥
1.5V
Vcc
V
IH
Vcc
Vcc
t
CDR
CE1
≥
Vcc - 0.2V
t
R
V
IH
CE1
LOW V
CC
DATA RETENTION WAVEFORM (2)
( CE2 Controlled )
Data Retention Mode
Vcc
Vcc
V
DR
≧
1.5V
Vcc
t
CDR
t
R
CE2
≦
0.2V
CE2
V
IL
V
IL
R0201-BS62LV8006
3
Revision 2.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
