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BS62LV8006FC-55 参数 Datasheet PDF下载

BS62LV8006FC-55图片预览
型号: BS62LV8006FC-55
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 1M ×8位 [Very Low Power/Voltage CMOS SRAM 1M X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 264 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
 浏览型号BS62LV8006FC-55的Datasheet PDF文件第1页浏览型号BS62LV8006FC-55的Datasheet PDF文件第2页浏览型号BS62LV8006FC-55的Datasheet PDF文件第3页浏览型号BS62LV8006FC-55的Datasheet PDF文件第4页浏览型号BS62LV8006FC-55的Datasheet PDF文件第6页浏览型号BS62LV8006FC-55的Datasheet PDF文件第7页浏览型号BS62LV8006FC-55的Datasheet PDF文件第8页浏览型号BS62LV8006FC-55的Datasheet PDF文件第9页  
BSI
SWITCHING WAVEFORMS (READ CYCLE
)
READ CYCLE1
(1,2,4)
BS62LV8006
t
RC
ADDRESS
t
D
OUT
t
OH
AA
t
OH
READ CYCLE2
(1,3,4)
CE2
t
t
ACS2
ACS1
CE1
t
D
OUT
(5)
CLZ
t
(5)
CHZ
READ CYCLE3
(1,4)
ADDRESS
t
RC
t
OE
AA
t
CE2
OE
t
OH
t
t
t
t
(5)
CLZ
ACS2
CE1
OLZ
ACS1
t
t
OHZ
CHZ
(5)
(1,5)
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2 = V
IH
.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = V
IL
.
5. The parameter is guaranteed but not 100% tested.
R0201-BS62LV8006
5
Revision 2.1
Jan.
2004