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CAT24C256 参数 Datasheet PDF下载

CAT24C256图片预览
型号: CAT24C256
PDF下载: 下载PDF文件 查看货源
内容描述: 256 KB I²C CMOS串行EEPROM [256-Kb I2C CMOS Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 14 页 / 549 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT24C256
AbSOluTE MAXIMuM RATIngS
(1)
Storage Temperature
Voltage on Any Pin with Respect to Ground
(2)
RElIAbIlITy CHARACTERISTICS
(3)
Symbol
N
END(4)
T
DR
Parameter
Endurance
Data Retention
Min
,000,000
00
units
Program/ Erase Cycles
Years
-65°C to +50°C
-0.5 V to +6.5 V
D.C. OPERATIng CHARACTERISTICS
V
CC
= .8 V to 5.5 V, T
A
= -40°C to 85°C, unless otherwise specified.
Symbol
I
CC
I
SB
I
L
V
IL
V
IH
V
OL
V
OL2
Parameter
Supply Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
V
CC
> 2.5 V, I
OL
= 3.0 mA
V
CC
> .8 V, I
OL
= .0 mA
Test Conditions
Read or Write at 400 kHz
All I/O Pins at GND or V
CC
Pin at GND or V
CC
-0.5
Min
Max



V
CC
x 0.3
0.4
0.2
V
CC
x 0.7 V
CC
+ 0.5
units
mA
µA
µA
V
V
V
V
PIn IMPEDAnCE CHARACTERISTICS
T
A
= 25°C, f = 400 kHz, V
CC
= 5 V
Symbol
C
IN(3)
C
IN(3)
notes:
() Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5 V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than -.5 V or overshoot to no more than V
CC
+ .5 V, for periods of less than 20 ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q00
and JEDEC test methods.
(4) Page Mode, V
CC
= 5 V, 25°C
Parameter
SDA I/O Pin Capacitance
Input Capacitance (other pins)
Conditions
V
IN
= 0 V
V
IN
= 0 V
Min
Max
8
6
units
pF
pF
Doc. No. 04, Rev. D
2
© 2007 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice