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CAT25010YI-GT3 参数 Datasheet PDF下载

CAT25010YI-GT3图片预览
型号: CAT25010YI-GT3
PDF下载: 下载PDF文件 查看货源
内容描述: 1 - KB , 2 - KB和4 KB的SPI串行EEPROM CMOS [1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 17 页 / 236 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT25010, CAT25020, CAT25040
ABSOLUTE MAXIMUM RATINGS
(1)
Parameters
Storage Temperature
Voltage on any Pin with Respect to Ground
(2)
RELIABILITY CHARACTERISTICS
(3)
Symbol
N
END(4)
T
DR
Parameter
Endurance
Data Retention
Min
1,000,000
100
Units
Program/ Erase Cycles
Years
Ratings
-65 to +150
-0.5 to V
CC
+ 0.5
Units
ºC
V
D.C. OPERATING CHARACTERISTICS
V
CC
= +1.8V to +5.5V, T
A
=-40°C to +125°C unless otherwise specified.
Symbol Parameter
I
CC
I
SB1
I
SB2
I
L
I
LO
V
IL
V
IH
V
OL1
V
OH1
V
OL2
V
OH2
Supply Current
Standby Current
Standby Current
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
V
CC
> 2.5V, I
OL
= 3.0mA
V
CC
> 2.5V, I
OH
= -1.6mA
V
CC
> 1.8V, I
OL
= 150µA
V
CC
> 1.8V, I
OH
= -100µA
V
CC
- 0.2V
V
CC
- 0.8V
0.2
Test Conditions
Read, Write, V
CC
= 5.0V,
SO open
¯¯
V
IN
= GND or V
CC
, CS = V
CC
,
¯¯¯ = V
CC
, V
CC
= 5.0V
WP
¯¯
V
IN
= GND or V
CC
, CS = V
CC
,
¯¯¯ = GND, V
CC
= 5.0V
WP
V
IN
= GND or V
CC
¯¯
CS = V
CC
,
V
OUT
= GND or V
CC
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
-2
-1
-1
-0.5
0.7V
CC
10MHz / -40°C to 85°C
5MHz / -40°C to 125°C
Min
Max
2
2
2
4
5
2
1
2
0.3V
CC
V
CC
+ 0.5
0.4
Units
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
PIN CAPACITANCE
(3)
T
A
= 25˚C, f = 1.0MHz, V
CC
= +5.0V
Symbol
C
OUT
C
IN
Test
Output Capacitance (SO)
¯¯
Input Capacitance (CS, SCK, SI, ¯¯¯, HOLD)
WP ¯¯¯¯¯
Conditions
V
OUT
= 0V
V
IN
= 0V
Min
Typ
Max
8
8
Units
pF
pF
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5V or higher than V
CC
+ 0.5V. During transitions, the voltage on any pin may
undershoot to no less than -1.5V or overshoot to no more than V
CC
+ 1.5V, for periods of less than 20ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Page Mode, V
CC
= 5V, 25°C
Doc. No. MD-1006 Rev. T
2
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice