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CAT28F010N-12T 参数 Datasheet PDF下载

CAT28F010N-12T图片预览
型号: CAT28F010N-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位的CMOS闪存 [1 Megabit CMOS Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 14 页 / 104 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT28F010
WRITE OPERATIONS
The following operations are initiated by observing the
sequence specified in the Write Command Table.
Read Mode
The device can be put into a standard READ mode by
initiating a write cycle with 00H on the data bus. The
subsequent read cycles will be performed similar to a
standard EPROM or E
2
PROM Read.
Signature Mode
An alternative method for reading device signature (see
Read Operations Signature Mode), is initiated by writing
the code 90H into the command register while keeping
V
PP
high. A read cycle from address 0000H with CE and
OE low (and WE high) will output the device signature.
CATALYST Code = 00110001 (31H)
A Read cycle from address 0001H retrieves the binary
code for the device on outputs I/O
0
to I/O
7
.
28F010 Code = 1011 0100 (B4H)
Figure 4. A.C. Timing for Erase Operation
VCC POWER-UP
& STANDBY
SETUP ERASE
COMMAND
ERASE
COMMAND
ERASING
ERASE VERIFY
COMMAND
ERASE
VCC POWER-DOWN/
VERIFICATION
STANDBY
ADDRESSES
tWC
tWC
tAS
CE (E)
tCS
tCH
OE (G)
tGHWL
tWPH
WE (W)
tWP
tDS
HIGH-Z
DATA (I/O)
DATA IN
= 20H
tDH
tDS
tWP
tDH
tWP
tDS
tDH
DATA IN
= A0H
tLZ
tCE
VCC 5.0V
0V
VPP VPPH
VPPL
28F010 F11
tWC
tAH
tRC
tCH
tCS
tCH
tEHQZ
tWHWH2
tWHGL
tDF
tOE
tOLZ
tOH
DATA IN
= 20H
VALID
DATA OUT
tVPEL
9
Doc. No. 25005-0A 2/98 F-1