CAT28F010
FUNCTION TABLE
(1)
Pins
Mode
Read
Output Disable
Standby
Signature (MFG)
Signature (Device)
Program/Erase
Write Cycle
Read Cycle
WRITE COMMAND TABLE
Commands are written into the command register in one or two write cycles. The command register can be altered
only when V
PP
is high and the instruction byte is latched on the rising edge of
WE.
Write cycles also internally latch
addresses and data required for programming and erase operations.
Pins
First Bus Cycle
Mode
Set Read
Read Sig. (MFG)
Read Sig. (Device)
Erase
Erase Verify
Program
Program Verify
Reset
Operation
Write
Write
Write
Write
Write
Write
Write
Write
Address
X
X
X
X
A
IN
X
X
X
D
IN
00H
90H
90H
20H
A0H
40H
C0H
FFH
Operation
Read
Read
Read
Write
Read
Write
Read
Write
Second Bus Cycle
Address
A
IN
00
01
X
X
A
IN
X
X
FFH
D
IN
D
OUT
20H
D
OUT
D
IN
D
OUT
D
OUT
31H
B4H
CE
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
OE
V
IL
V
IH
X
V
IL
V
IL
V
IH
V
IH
V
IL
WE
V
IH
V
IH
X
V
IH
V
IH
V
IL
V
IL
V
IH
V
PP
V
PPL
X
V
PPL
X
X
V
PPH
V
PPH
V
PPH
I/O
D
OUT
High-Z
High-Z
31H
B4H
D
IN
D
IN
D
OUT
A
0
= V
IL
, A
9
= 12V
A
0
= V
IH
, A
9
= 12V
See Command Table
During Write Cycle
During Write Cycle
Notes
Note:
(1) Logic Levels: X = Logic ‘Do not care’ (V
IH
, V
IL
, V
PPL
, V
PPH
)
7
Doc. No. 25005-0A 2/98 F-1
CATALYST [ CATALYST SEMICONDUCTOR ]
