CAT28LV256
D.C. OPERATING CHARACTERISTICS
V
CC
= 3.0V to 3.6V, unless otherwise specified
Limits
Symbol
I
CC
I
SBC(2)
I
LI
I
LO
V
IH(2)
V
IL
V
OH
V
OL
V
WI
Parameter
V
CC
Current (Operating, TTL)
V
CC
Current (Standby, CMOS)
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
2
–1
–5
2
–0.3
2
0.3
Min.
Typ.
Max.
15
150
1
5
V
CC
+0.3
0.6
Units
mA
µA
µA
µA
V
V
V
V
V
I
OH
= –100µA
I
OL
= 1.0mA
Test Conditions
CE
=
OE
= V
IL
,
f = 1/t
RC
min, All I/O’s Open
CE
= V
IHC
,
All I/O’s Open
V
IN
= GND to V
CC
V
OUT
= GND to V
CC
,
CE
= V
IH
A.C. CHARACTERISTICS, Read Cycle
V
CC
= 3.0V to 3.6V, unless otherwise specified
28LV256-20
Symbol
t
RC
t
CE
t
AA
t
OE
t
LZ(1)
t
OLZ(1)
t
HZ(1)(3)
t
OHZ(1)(3)
t
OH(1)
Parameter
Read Cycle Time
CE
Access Time
Address Access Time
OE
Access Time
CE
Low to Active Output
OE
Low to Active Output
CE
High to High-Z Output
OE
High to High-Z Output
Output Hold from Address Change
0
0
0
50
50
0
Min.
200
200
200
80
0
0
55
55
0
Max.
28LV256-25
Min.
250
250
250
100
0
0
60
60
Max.
28LV256-30
Min.
300
300
300
110
Max. Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) V
IHC
= V
CC
–0.3V to V
CC
+0.3V.
(3) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
Doc. No. 25040-00 4/01 P-1
4
CATALYST [ CATALYST SEMICONDUCTOR ]
