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NE350184C 参数 Datasheet PDF下载

NE350184C图片预览
型号: NE350184C
PDF下载: 下载PDF文件 查看货源
内容描述: 异质结型场效应晶体管K- BAND超低噪声放大器N沟道HJ -FET [HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET]
分类和应用: 晶体放大器晶体管场效应晶体管
文件页数/大小: 8 页 / 265 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE350184C
TYPICAL CHARACTERISTICS (T
A
= +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
100
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Total Power Dissipation P
tot
(mW)
150
Drain Current I
D
(mA)
200
80
60
V
GS
= 0 V
–0.2
V
20
–0.4
V
–0.6
V
100
40
50
0
50
100
150
200
250
0
1.0
Drain to Source Voltage V
DS
(V)
2.0
Ambient Temperature T
A
(˚C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
V
DS
= 2 V
Drain Current I
D
(mA)
60
40
20
0
–2.0
–1.0
Gate to Source Voltage V
GS
(V)
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0
25
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
2.0
20
f = 20 GHz
V
DS
= 2 V
G
a
18
16
14
12
10
8
NF
min
6
4
2
0
5
10
15
20
25
0
30
Minimum Noise Figure NF
min
(dB)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
NF
min
G
a
Minimum Noise Figure NF
min
(dB)
V
DS
= 2 V
I
D
= 10 mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Associated Gain G
a
(dB)
15
10
5
0
30
25
Frequency f (GHz)
Drain Current I
D
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10584EJ01V0S
3
Associated Gain G
a
(dB)
20