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NESG2101M05-T1-A 参数 Datasheet PDF下载

NESG2101M05-T1-A图片预览
型号: NESG2101M05-T1-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 15 页 / 579 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG2101M05
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
30
V
CE
= 2 V
f = 2 GHz
20
V
CE
= 1 V
f = 3 GHz
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
25
15
MSG
MAG
20
10
MSG
15
MAG
5
|S
21e
|
2
10
|S
21e
|
2
0
5
-5
0
1
10
100
-10
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
30
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
V
CE
= 2 V
f = 3 GHz
15
MSG
MAG
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
V
CE
= 3 V
f = 1 GHz
MAG
25
MSG
10
2
20
2
5
|S
21e
|
15
|S
21e
|
0
10
-5
5
-10
1
10
100
0
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
V
CE
= 4 V
f = 1 GHz
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
30
30
MAG
V
CE
= 3 V
f = 2 GHz
25
25
MSG
20
2
20
MSG
MAG
15
|S
21e
|
15
10
10
|S
21e
|
2
5
5
0
1
10
100
0
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)